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| BAQ133...BAQ135 Vishay Telefunken Silicon Planar Diodes Features D Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Test Conditions Type BAQ133 BAQ134 BAQ135 Symbol VR VR VR IFSM IF Tj Tstg Value 30 60 125 2 200 200 -65...+200 Unit V V V A mA C C Peak forward surge current Forward current Junction temperature Storage temperature range tp=1ms Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA Ex300lx, VR Ex300lx, VR, Tj=125C Ex300lx, VR=15V Ex300lx, VR=30V Ex300lx, VR=60V IR=5mA, tp/T=0.01, tp=0.3ms m Type Symbol VF IR IR IR IR IR V(BR) V(BR) V(BR) CD Min Typ 1 0.5 0.5 0.5 40 70 140 3 Max 1 3 0.5 1 1 1 Unit V nA mA nA nA nA V V V pF Breakdown voltage g BAQ133 BAQ134 BAQ135 BAQ133 BAQ134 BAQ135 Diode capacitance VR=0, f=1MHz Document Number 85536 Rev. 2, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 1 (3) BAQ133...BAQ135 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 10000 I R - Reverse Current ( nA ) VR = VRRM 1000 Scattering Limit 100 IF - Forward Current ( mA ) 1000 Tj = 25C 100 Scattering Limit 10 10 1 1 0 94 9079 0.1 40 80 120 160 200 94 9078 0 0.4 0.8 1.2 1.6 2.0 Tj - Junction Temperature ( C ) VF - Forward Voltage ( V ) Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage Dimensions in mm 96 12071 www.vishay.de * FaxBack +1-408-970-5600 2 (3) Document Number 85536 Rev. 2, 01-Apr-99 BAQ133...BAQ135 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85536 Rev. 2, 01-Apr-99 www.vishay.de * FaxBack +1-408-970-5600 3 (3) |
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